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InGaAsN as absorber in APDs for 1.3 micron wavelength applications (2010)

First Author: Ng J

Attributed to: New high-performance avalanche photodiodes based on the unique properties of dilute nitrides funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/iciprm.2010.5516060

Publication URI: http://dx.doi.org/10.1109/iciprm.2010.5516060

Type: Conference/Paper/Proceeding/Abstract

ISBN: 978-1-4244-5919-3