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Scalable high-mobility MoS2 thin films fabricated by an atmospheric pressure chemical vapor deposition process at ambient temperature. (2014)

First Author: Huang CC
Attributed to:  EPSRC Centre for Innovative Manufacturing in Photonics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1039/c4nr04228j

PubMed Identifier: 25226424

Publication URI: http://europepmc.org/abstract/MED/25226424

Type: Journal Article/Review

Volume: 6

Parent Publication: Nanoscale

Issue: 21

ISSN: 2040-3364