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CdSe quantum dots grown on a Zn0.2Mg0.8S0.64Se0.36 barrier: MBE growth and µ-PL characterisation (2011)

First Author: Davidson I

Attributed to: Ultra high detectivity single carrier multiplication InAs avalanche photodiodes for IR optical detection funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2010.10.116

Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2010.10.116

Type: Journal Article/Review

Parent Publication: Journal of Crystal Growth

Issue: 1