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Experimental and modelling study of InGaBiAs/InP alloys with up to 5.8% Bi, and with ? so > E g (2015)

First Author: Chai G

Attributed to: Materials World Network: III-V Bismide Materials for IR and Mid IR Semiconductors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/0268-1242/30/9/094015

Publication URI: http://dx.doi.org/10.1088/0268-1242/30/9/094015

Type: Journal Article/Review

Parent Publication: Semiconductor Science and Technology

Issue: 9