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Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias (2015)

First Author: Pooth A

Attributed to: GaN Electronics: RF Reliability and Degradation Mechanisms funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4936780

Publication URI: http://dx.doi.org/10.1063/1.4936780

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 21