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Enhancement mode operation in AlInN/GaN (MIS)HEMTs on Si substrates using a fluorine implant (2015)

First Author: Zaidi Z

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/0268-1242/30/10/105007

Publication URI: http://dx.doi.org/10.1088/0268-1242/30/10/105007

Type: Journal Article/Review

Parent Publication: Semiconductor Science and Technology

Issue: 10