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Coalescence-induced planar defects in GaN layers grown on ordered arrays of nanorods by metal-organic vapour phase epitaxy (2013)

First Author: Huang C

Attributed to: Novel High Thermal Conductivity Substrates for GaN Electronics: Thermal Innovation funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1080/14786435.2013.805272

Publication URI: http://dx.doi.org/10.1080/14786435.2013.805272

Type: Journal Article/Review

Parent Publication: Philosophical Magazine

Issue: 23

ISSN: 14786435