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Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature (2014)

First Author: Mitrovic I

Attributed to: High permittivity dielectrics on Ge for end of Roadmap application funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4868091

Publication URI: http://dx.doi.org/10.1063/1.4868091

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 11