Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics (2016)
Attributed to:
EPSRC Manufacturing Fellowship in Gallium Nitride
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4942093
Publication URI: http://dx.doi.org/10.1063/1.4942093
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 7
ISSN: 00036951