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High-quality III-nitride films on conductive, transparent (2¯01)-oriented ß-Ga2O3 using a GaN buffer layer. (2016)

First Author: Muhammed MM

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1038/srep29747

PubMed Identifier: 27412372

Publication URI: http://europepmc.org/abstract/MED/27412372

Type: Journal Article/Review

Volume: 6

Parent Publication: Scientific reports

ISSN: 2045-2322