📣 Try out the NEW Gateway to Research and let us know what you think.

We're looking for users to test the new service during August and September and share their feedback. Express your interest by completing this short form.

Characteristics of GaN-based light emitting diodes with different thicknesses of buffer layer grown by HVPE and MOCVD (2017)

First Author: Tian P

Attributed to: Ultra-parallel visible light communications (UP-VLC) funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1361-6463/50/7/075101

Publication URI: http://dx.doi.org/10.1088/1361-6463/50/7/075101

Type: Journal Article/Review

Parent Publication: Journal of Physics D: Applied Physics

Issue: 7