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Development of III-nitride nanostructures for low threshold lasing and semipolar GaN towards Yellow/Orange lasing (2016)

First Author: Wang T

Attributed to: Manufacturing of nano-engineered III-nitride semiconductors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ipcon.2016.7831115

Publication URI: http://dx.doi.org/10.1109/ipcon.2016.7831115

Type: Conference/Paper/Proceeding/Abstract