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Electrical Properties and Interfacial Studies of HfxTi1-xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates (2015)

First Author: Lu Q
Attributed to:  High permittivity dielectrics on Ge for end of Roadmap application funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.3390/ma8125454

PubMed Identifier: 28793705

Publication URI: http://europepmc.org/abstract/MED/28793705

Type: Journal Article/Review

Parent Publication: Materials

Issue: 12

ISSN: 1996-1944