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Recombination centers in 4H-SiC investigated by electrically detected magnetic resonance and ab initio modeling (2016)

First Author: Cottom J

Attributed to: MATERIALS CHEMISTRY HIGH END COMPUTING CONSORTIUM funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4948242

Publication URI: http://dx.doi.org/10.1063/1.4948242

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 18