N-type ohmic contacts to undoped GaAs/AlGaAs quantum wells using only front-sided processing: application to ambipolar FETs (2016)
Attributed to:
Electron-hole bilayers: Excitonic phases and collective modes
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/0268-1242/31/6/065013
Publication URI: http://dx.doi.org/10.1088/0268-1242/31/6/065013
Type: Journal Article/Review
Parent Publication: Semiconductor Science and Technology
Issue: 6