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Enhanced Photoluminescence from InGaN/GaN Quantum Wells on A GaN/Si(111) Template with Extended Three-Dimensional GaN Growth on Low-Temperature AlN Interlayer (2013)

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.7567/jjap.52.061002

Publication URI: http://dx.doi.org/10.7567/jjap.52.061002

Type: Journal Article/Review

Parent Publication: Japanese Journal of Applied Physics

Issue: 6R

ISSN: 00214922