📣 Try out the NEW Gateway to Research and let us know what you think.

We're looking for users to test the new service during August and September and share their feedback. Express your interest by completing this short form.

Fabrication of 3C-SiC MOS Capacitors Using High-Temperature Oxidation (2015)

First Author: Sharma Y
Attributed to:  Vehicle Electrical Systems Integration (VESI) funded by UKRI

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.464

Publication URI: http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.464

Type: Journal Article/Review

Parent Publication: Materials Science Forum