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Stress Engineering During the Fabrication of InGaN/GaN Vertical Light Emitting Diodes for Reducing the Quantum Confined Stark Effect (2016)

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2016.2614435

Publication URI: http://dx.doi.org/10.1109/ted.2016.2614435

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 12