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A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density (2018)

First Author: Jin J

Attributed to: ZnO MESFETs for application to Intelligent Windows funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1361-6463/aaa4a2

Publication URI: http://dx.doi.org/10.1088/1361-6463/aaa4a2

Type: Journal Article/Review

Parent Publication: Journal of Physics D: Applied Physics

Issue: 6