📣 Try out the NEW Gateway to Research and let us know what you think.

We're looking for users to test the new service during August and September and share their feedback. Express your interest by completing this short form.

Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors (2018)

First Author: Tang F

Attributed to: EPSRC Manufacturing Fellowship in Gallium Nitride funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.5006255

Publication URI: http://dx.doi.org/10.1063/1.5006255

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 2

ISSN: 0021-8979