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A 6.7-GHz Active Gate Driver for GaN FETs to Combat Overshoot, Ringing, and EMI (2018)

First Author: Dymond H

Attributed to: Underpinning Power Electronics 2012: Components Theme funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/tpel.2017.2669879

Publication URI: http://dx.doi.org/10.1109/tpel.2017.2669879

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Power Electronics

Issue: 1