📣 Try out the NEW Gateway to Research and let us know what you think.

We're looking for users to test the new service during August and September and share their feedback. Express your interest by completing this short form.

High-Temperature Molecular Beam Epitaxy of Hexagonal Boron Nitride with High Active Nitrogen Fluxes. (2018)

First Author: Cheng TS

Attributed to: UK Quantum Technology Hub for Sensors and Metrology funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.3390/ma11071119

PubMed Identifier: 29966333

Publication URI: http://europepmc.org/abstract/MED/29966333

Type: Journal Article/Review

Volume: 11

Parent Publication: Materials (Basel, Switzerland)

Issue: 7

ISSN: 1996-1944