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Random Dopant-Induced Variability in Si-InAs Nanowire Tunnel FETs: A Quantum Transport Simulation Study (2018)

First Author: Carrillo-Nunez H

Attributed to: Quantum Electronics Device Modelling (QUANTDEVMOD) funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/led.2018.2859586

Publication URI: http://dx.doi.org/10.1109/led.2018.2859586

Type: Journal Article/Review

Parent Publication: IEEE Electron Device Letters

Issue: 9