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Defect formation in In 2 O 3 and SnO 2 : a new atomistic approach based on accurate lattice energies (2018)

First Author: Hou Q

Attributed to: Energy Materials: Computational Solutions funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1039/c8tc04760j

Publication URI: http://dx.doi.org/10.1039/c8tc04760j

Type: Journal Article/Review

Parent Publication: Journal of Materials Chemistry C

Issue: 45