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Optical and structural properties of InGaSb/GaAs quantum dots grown by molecular beam epitaxy (2018)

First Author: Hodgson P

Attributed to: Novel InSb quantum dots monolithically grown on silicon for low cost mid-infrared light emitting diodes funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1361-6641/aae627

Publication URI: http://dx.doi.org/10.1088/1361-6641/aae627

Type: Journal Article/Review

Parent Publication: Semiconductor Science and Technology

Issue: 12