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Effect of HCl cleaning on InSb-Al 2 O 3 MOS capacitors (2019)

First Author: Vavasour O

Attributed to: EPSRC Engineering Fellowships for Growth: Narrow Band-gap Semiconductors for Integrated Sensing and Communications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1361-6641/ab0331

Publication URI: http://dx.doi.org/10.1088/1361-6641/ab0331

Type: Journal Article/Review

Parent Publication: Semiconductor Science and Technology

Issue: 3