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Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates (2019)

First Author: Lee L

Attributed to: Vertical cubic GaN LEDs on 150mm 3C-SiC substrates funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2019.125167

Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2019.125167

Type: Journal Article/Review

Parent Publication: Journal of Crystal Growth