Confocal photoluminescence investigation to identify basal stacking fault's role in the optical properties of semi-polar InGaN/GaN lighting emitting diodes. (2019)
Attributed to:
Manufacturing of nano-engineered III-nitride semiconductors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1038/s41598-019-46292-8
PubMed Identifier: 31278338
Publication URI: http://europepmc.org/abstract/MED/31278338
Type: Journal Article/Review
Volume: 9
Parent Publication: Scientific reports
Issue: 1
ISSN: 2045-2322