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Suppression of substrate coupling in GaN high electron mobility transistors (HEMTs) by hole injection from the p-GaN gate (2019)

First Author: Pagnano D

Attributed to: Sir Henry Royce Institute - Cambridge Equipment funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.5121637

Publication URI: http://dx.doi.org/10.1063/1.5121637

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 20