Metrology of crystal defects through intensity variations in secondary electrons from the diffraction of primary electrons in a scanning electron microscope. (2020)
Attributed to:
Manufacturing of nano-engineered III-nitride semiconductors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.ultramic.2020.112977
PubMed Identifier: 32361281
Publication URI: http://europepmc.org/abstract/MED/32361281
Type: Journal Article/Review
Volume: 213
Parent Publication: Ultramicroscopy
ISSN: 0304-3991