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High Modulation Bandwidth of Semipolar (11-22) InGaN/GaN LEDs with Long Wavelength Emission. (2020)

First Author: Haggar JI

Attributed to: Manufacturing of nano-engineered III-nitride semiconductors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1021/acsaelm.0c00399

PubMed Identifier: 32904914

Publication URI: http://europepmc.org/abstract/MED/32904914

Type: Journal Article/Review

Volume: 2

Parent Publication: ACS applied electronic materials

Issue: 8

ISSN: 2637-6113