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Electronic Structure and Optoelectronic Properties of Bismuth Oxyiodide Robust against Percent-Level Iodine-, Oxygen-, and Bismuth-Related Surface Defects (2020)

First Author: Huq T

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/adfm.201909983

Publication URI: http://dx.doi.org/10.1002/adfm.201909983

Type: Journal Article/Review

Parent Publication: Advanced Functional Materials

Issue: 13