E-TCT characterization of a thinned, backside biased, irradiated HV-CMOS pixel test structure (2021)
Attributed to:
Development of HV-CMOS sensor technology for the next generation of particle physics experiments
funded by
FLF
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.nima.2020.164949
Publication URI: http://dx.doi.org/10.1016/j.nima.2020.164949
Type: Journal Article/Review
Parent Publication: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment