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Valence band engineering of GaAsBi for low noise avalanche photodiodes. (2021)

First Author: Liu Y

Attributed to: Plugging the 1 eV band gap gap: GaAsBiN as a highly mismatched alloy for multi-junction photovoltaics. funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1038/s41467-021-24966-0

PubMed Identifier: 34362898

Publication URI: http://europepmc.org/abstract/MED/34362898

Type: Journal Article/Review

Volume: 12

Parent Publication: Nature communications

Issue: 1

ISSN: 2041-1723