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Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications (2021)

First Author: Renz A

Attributed to: Ultra-high voltage (>30KV) power devices through superior materials for HVDC transmission funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1361-6641/abefa1

Publication URI: http://dx.doi.org/10.1088/1361-6641/abefa1

Type: Journal Article/Review

Parent Publication: Semiconductor Science and Technology

Issue: 5