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Effect of Si-doped InGaN underlayers on photoluminescence efficiency and recombination dynamics in InGaN/GaN quantum wells (2021)

First Author: Church S

Attributed to: Beyond Blue: New Horizons in Nitrides (Platform Grant Renewal) funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1361-6463/ac22d3

Publication URI: http://dx.doi.org/10.1088/1361-6463/ac22d3

Type: Journal Article/Review

Parent Publication: Journal of Physics D: Applied Physics

Issue: 47