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The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal (2021)

First Author: Renz A

Attributed to: Vehicle Electrical Systems Integration (VESI) funded by UKRI

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.mssp.2020.105527

Publication URI: http://dx.doi.org/10.1016/j.mssp.2020.105527

Type: Journal Article/Review

Parent Publication: Materials Science in Semiconductor Processing