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OPTIMISATION OF THE GATE VOLTAGE IN SiC MOSFETS: EFFICIENCY VS RELIABILITY (2021)

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1049/icp.2021.1043

Publication URI: http://dx.doi.org/10.1049/icp.2021.1043

Type: Journal Article/Review

Parent Publication: IET Conference Proceedings

Issue: 7