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Optical Study of p-Doping in GaAs Nanowires for Low-Threshold and High-Yield Lasing. (2019)

First Author: Alanis JA

Attributed to: Fundamental studies of zincblende nitride structures for optoelectronic applications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1021/acs.nanolett.8b04048

PubMed Identifier: 30525674

Publication URI: http://europepmc.org/abstract/MED/30525674

Type: Journal Article/Review

Volume: 19

Parent Publication: Nano letters

Issue: 1

ISSN: 1530-6984