📣 Try out the NEW Gateway to Research and let us know what you think.

We're looking for users to test the new service during August and September and share their feedback. Express your interest by completing this short form.

Inherent electron and hole trapping in amorphous phase-change memory materials: Ge 2 Sb 2 Te 5 (2022)

First Author: Konstantinou K

Attributed to: HIGH END COMPUTING MATERIALS CHEMISTRY CONSORTIUM funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1039/d2tc00486k

Publication URI: http://dx.doi.org/10.1039/d2tc00486k

Type: Journal Article/Review

Parent Publication: Journal of Materials Chemistry C

Issue: 17