📣 Try out the NEW Gateway to Research and let us know what you think.

We're looking for users to test the new service during August and September and share their feedback. Express your interest by completing this short form.

(Invited, Digital Presentation) Improved Reliability of 4H-SiC Metal-Oxide-Semiconductor Devices Utilising Atomic Layer Deposited Layers with Enhanced Interface Quality (2022)

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1149/ma2022-01191065mtgabs

Publication URI: http://dx.doi.org/10.1149/ma2022-01191065mtgabs

Type: Journal Article/Review

Parent Publication: ECS Meeting Abstracts

Issue: 19