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Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells. (2018)

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.3390/ma11091736

PubMed Identifier: 30223545

Publication URI: http://europepmc.org/abstract/MED/30223545

Type: Journal Article/Review

Volume: 11

Parent Publication: Materials (Basel, Switzerland)

Issue: 9

ISSN: 1996-1944