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Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi2O2Se. (2018)

First Author: Chen C

Attributed to: Oxford Quantum Materials Platform Grant funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1126/sciadv.aat8355

PubMed Identifier: 30225369

Publication URI: http://europepmc.org/abstract/MED/30225369

Type: Journal Article/Review

Volume: 4

Parent Publication: Science advances

Issue: 9

ISSN: 2375-2548