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Hydrogen-Terminated Diamond Field-Effect Transistors With Cutoff Frequency of 53 GHz (2012)

First Author: Russell S

Attributed to: Ultra short gate length diamond FETs for high power/high frequency applications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/led.2012.2210020

Publication URI: http://dx.doi.org/10.1109/led.2012.2210020

Type: Journal Article/Review

Parent Publication: IEEE Electron Device Letters

Issue: 10