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Physical simulation of dynamic resistive switching in metal oxides using a Schottky contact barrier model (2015)

First Author: Marchewka A

Attributed to: Resistive switches (RRAM) and memristive behaviour in silicon-rich silicon oxides funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/sispad.2015.7292318

Publication URI: http://dx.doi.org/10.1109/sispad.2015.7292318

Type: Conference/Paper/Proceeding/Abstract