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Point Defects in InGaN/GaN Core-Shell Nanorods: Role of the Regrowth Interface (2021)

First Author: Loeto K

Attributed to: Manufacturing of nano-engineered III-nitride semiconductors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.17863/cam.65608

Publication URI: https://www.repository.cam.ac.uk/handle/1810/318494

Type: Other