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Dislocations as channels for the fabrication of sub-surface porous GaN by electrochemical etching (2020)

First Author: Massabuau F

Attributed to: Non-polar nitride quantum dots for application in single photon sources funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.17863/cam.50208

Publication URI: https://www.repository.cam.ac.uk/handle/1810/303132

Type: Journal Article/Review