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High-quality Ge/Si 0.4 Ge 0.6 multiple quantum wells for photonic applications: growth by reduced pressure chemical vapour deposition and structural characteristics (2011)

First Author: Liu X

Attributed to: UK Silicon Photonics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/0022-3727/44/5/055102

Publication URI: http://dx.doi.org/10.1088/0022-3727/44/5/055102

Type: Journal Article/Review

Parent Publication: Journal of Physics D: Applied Physics

Issue: 5