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Variability in Si Nanowire MOSFETs Due to the Combined Effect of Interface Roughness and Random Dopants: A Fully Three-Dimensional NEGF Simulation Study (2010)

First Author: Martinez A

Attributed to: Atomic Scale Simulation of Nanoelectronic Devices funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2010.2048405

Publication URI: http://dx.doi.org/10.1109/ted.2010.2048405

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 7