Investigation of Strain-Relaxation Characteristics of Nitrides Grown on Si(110) by Metalorganic Chemical Vapor Deposition Using X-ray Diffraction (2013)
Attributed to:
Novel High Thermal Conductivity Substrates for GaN Electronics: Thermal Innovation
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.7567/jjap.52.08jb24
Publication URI: http://dx.doi.org/10.7567/jjap.52.08jb24
Type: Journal Article/Review
Parent Publication: Japanese Journal of Applied Physics
Issue: 8S